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this is information on a product in full production. november 2013 docid024005 rev 3 1/13 STF45N10F7 n-channel 100 v, 0.0145 ? typ., 30 a, stripfet? vii deepgate? power mosfet in a to-220fp package datasheet - production data figure 1. internal schematic diagram features ? ultra low on-resistance ? 100% avalanche tested applications ? switching applications description this device utilizes the 7 th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. 1 2 3 to-220fp $0y ' * 6 order code v ds r ds(on) max. (1) 1. @ vgs = 10 v i d p tot STF45N10F7 100 v 0.018 30 a 25 w table 1. device summary order codes marking package packaging STF45N10F7 45n10f7 to-220fp tube www.st.com
contents STF45N10F7 2/13 docid024005 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
docid024005 rev 3 3/13 STF45N10F7 electrical ratings 13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 100 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 30 a i d drain current (continuous) at t c = 100 c 21.4 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 120 a p tot total dissipation at t c = 25 c 25 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;tc=25 c) 2500 v t j operating junction temperature -55 to 175 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit r thj-case thermal resistance junction-case 6 c/w r thj-amb thermal resistance junction-ambient 62.5 c/w
electrical characteristics STF45N10F7 4/13 docid024005 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage (v gs = 0) i d = 1 ma 100 - v i dss zero gate voltage drain current (v gs = 0) v ds = 100 v 10 a v ds = 100 v; t c =125 c 100 a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a2.5 4.5v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 15 a 0.0145 0.018 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 50 v, f =1 mhz, v gs = 0 - 1640 - pf c oss output capacitance - 360 - pf c rss reverse transfer capacitance -25 - pf q g total gate charge v dd = 50 v, i d = 30 a v gs = 10 v figure 14 -25 - nc q gs gate-source charge - 5.1 - nc q gd gate-drain charge - 12.2 - nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 50 v, i d = 15 a, r g = 4.7 , v gs = 10 v figure 13 -15 - ns t r rise time - 17 - ns t d(off) turn-off delay time - 24 - ns t f fall time - 8 - ns
docid024005 rev 3 5/13 STF45N10F7 electrical characteristics 13 table 7. source-drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 30 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 120 a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5%. forward on voltage i sd = 30 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 30 a, di/dt = 100 a/ s, v dd = 80 v, t j = 150 c -53 ns q rr reverse recovery charge - 67 nc i rrm reverse recovery current - 2.5 a
electrical characteristics STF45N10F7 6/13 docid024005 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100s 1ms 10ms 0.01 tj=175c tc=25c single pulse 100 am16108v1 single pulse =0.5 0.05 0.02 0.01 0.2 0.1 k 10 t p (s) -4 10 -3 10 -2 10 -5 10 -3 10 -2 10 -1 10 -1 10 0 am16121v1 figure 4. output characteristics figure 5. transfer characteristics i d 100 60 20 0 0 2 v ds (v) 4 (a) 6 5v 6v vgs=9, 10v 40 80 8 7v 8v am16147v1 i d 80 40 0 0 4 v gs (v) 8 (a) 2 6 20 60 100 v ds =8v am16148v1 figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance v gs 6 4 2 0 0 10 q g (nc) (v) 30 8 15 20 10 v dd =50v 12 5 25 i d =30a am16111v1 r ds(on) 14 13.5 13 10 i d (a) (m ) 5 15 14.5 v gs =10v 20 25 15 15.5 30 am16113v1
docid024005 rev 3 7/13 STF45N10F7 electrical characteristics 13 figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature c 1000 100 0 0 20 v ds (v) (pf) ciss coss crss 40 60 80 am16114v1 v gs(th) 0.8 0.6 0.4 0.2 -75 0 t j (c) (norm) -50 1 75 25 50 100 i d =250a -50 125 150 1.2 am16115v1 figure 10. normalized on-resistance vs temperature figure 11. normalized v (br)ds vs temperature r ds(on) 2 1 0 -75 0 t j (c) (norm) -50 75 25 50 100 0.5 1.5 -25 125 i d =15a v gs =10 v am16116v1 v -75 0 t j (c) (norm) -50 75 25 50 100 0.96 0.97 0.98 0.99 1 1.01 1.02 1.03 i d =1ma 1.04 -25 125 (br)ds am16119v1 figure 12. source-drain diode forward characteristics v sd 5 15 i sd (a) (v) 10 30 20 25 0.4 0.5 0.6 0.7 t j =-55c t j =175c t j =25c 0.8 0.9 1 am16118v1
test circuits STF45N10F7 8/13 docid024005 rev 3 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024005 rev 3 9/13 STF45N10F7 package mechanical data 13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STF45N10F7 10/13 docid024005 rev 3 table 8. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d2.5 2.75 e 0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g 4.95 5.2 g1 2.4 2.7 h10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2
docid024005 rev 3 11/13 STF45N10F7 package mechanical data 13 figure 19. to-220fp drawing 7012510_rev_k_b
revision history STF45N10F7 12/13 docid024005 rev 3 5 revision history table 9. document revision history date revision changes 03-dec-2012 1 first release. 06-dec-2012 2 minor text changes the part number sth110n10f7-2 has been moved to a separate datasheet the part number stp110n10f7 has been moved to a separate datasheet 11-nov-2013 3 document status promoted from preliminary to production data.
docid024005 rev 3 13/13 STF45N10F7 13 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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